Controllable two- and three-state magnetization switching in single-layer epitaxial Pd_1−xFe_x films and an epitaxial Pd_0.92Fe_0.08/Ag/Pd_0.96Fe_0.04 heterostructure

• Igor V. Yanilkin,
• Amir I. Gumarov,
• Gulnaz F. Gizzatullina,
• Roman V. Yusupov and
• Lenar R. Tagirov

Beilstein J. Nanotechnol. 2022, 13, 334–343, doi:10.3762/bjnano.13.28

• . Its magnetic configuration diagram has been constructed and the conditions have been determined for a controllable switching between stable parallel, orthogonal, and antiparallel arrangements of magnetic moments of the layers. Keywords: anisotropic magnetoresistance; magnetization reversal; Pd–Fe

• Pd0.92Fe0.08 film at different in-plane orientations of the magnetic field was studied by measuring the anisotropic magnetoresistance (AMR) using the four-probe method. For this purpose, the Pd0.92Fe0.08 film was cut with a diamond saw into stripe-like pieces. In the first sample the current flowed along the

• [25]. The difference in resistances ρx and ρz (magnetic field perpendicular to the current) is usually associated with the geometrical size effect [26]. A detailed study of the size effect for the Pd0.92Fe0.08 film is beyond the scope of this study. In addition to the anisotropic magnetoresistance

Magnetism and magnetoresistance of single Ni–Cu alloy nanowires

• Andreea Costas,
• Camelia Florica,
• Elena Matei,
• Maria Eugenia Toimil-Molares,
• Ionel Stavarache,
• Andrei Kuncser,
• Victor Kuncser and
• Ionut Enculescu

Beilstein J. Nanotechnol. 2018, 9, 2345–2355, doi:10.3762/bjnano.9.219

• magnetic elements, usually of dipolar type. In this paper we report on a strategy of studying the magnetic properties of single Ni–Cu alloy nanowires of high aspect ratio via specific anisotropic magnetoresistance measurements. In this respect, arrays of nanowires have been fabricated by means of templated

• , one observes the lack of any magnetoresistive effect in the parallel geometry and a magnetoresistive effect of the order of percent in the perpendicular geometry. Such behavior clearly reminds on anisotropic magnetoresistance effects the physical mechanisms of which were excellently described already

• of percent were observed in perpendicular geometry for all investigated samples and interpreted in terms of anisotropic magnetoresistance. Within this interpretation, a direct simple methodology for the transformation of the magnetoresistance data in transversal geometry into the corresponding

Influence of the thickness of an antiferromagnetic IrMn layer on the static and dynamic magnetization of weakly coupled CoFeB/IrMn/CoFeB trilayers

• Deepika Jhajhria,
• Dinesh K. Pandya and
• Sujeet Chaudhary

Beilstein J. Nanotechnol. 2018, 9, 2198–2208, doi:10.3762/bjnano.9.206

• , AF-based spintronics is gaining momentum because of the unique properties such as zero net magnetization, no stray fields, low magnetic susceptibility, large spin–orbit coupling, ultrafast dynamics and large magneto-transport effects [2][3][4][5][6]. Several of the effects such as tunnel anisotropic

• magnetoresistance [7], inverse spin Hall effect [8] and spin Seebeck effect [9][10] have already been reported in AF materials. Transfer of spin angular momentum presents one of the promising ways to control the magnetic properties of FM thin films [11]. However, little is known about spin transport in AF materials

Magnetic switching of nanoscale antidot lattices

• Ulf Wiedwald,
• Joachim Gräfe,
• Kristof M. Lebecki,
• Maxim Skripnik,
• Felix Haering,
• Gisela Schütz,
• Paul Ziemann,
• Eberhard Goering and
• Ulrich Nowak

Beilstein J. Nanotechnol. 2016, 7, 733–750, doi:10.3762/bjnano.7.65

• application of micromagnetic simulations leads to a detailed understanding of the switching modes of specific sample geometries. We highlight that even anisotropic magnetoresistance curves can be simulated in good agreement with experiments. In the second part, we first focus on the detailed discussion of the

• × 2 × 10 nm3) [28]. As will be shown later in connection with the anisotropic magnetoresistance (AMR) the major part of the total resistance arises from the 2.5 × 20 µm2 FIB-cut constriction. But still the continuous antidot film surrounding the channel influences the magnetic switching via dipolar